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       CDBER54-HF SMD Schottky Barrier Diode Page 1 QW-G1016 REV:B 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 mA IF = 0 .1mA IF = 1 0mA IF = 3 0mA IF = 1 00mA VF V 0.32 0.24 0.4 0.5 1 Reverse current IR uA VR = 2 5V Capacitance between terminals Reverse recovery time f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm CT Trr pF nS 5 10 2 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 0.6 0.3 200 21 30 30 PD Power dissipation mW 150 O C +125 TSTG Tj Storage temperature Junction temperature O C +125 -65 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) 0.022(0.55) Typ. 0.016(0.40) Typ. Comchip Technology CO., LTD. 0503/SOD-723F Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BF - Mounting position: Any - Weight: 0.002 gram(approx.). Io = 2 00 mA VR = 3 0 Volts RoHS Device Halogen Free |